丝印：027；WE-MCRI SMT Molded Coupled Inductor

General Information: Ambient Temperature (referring to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：644.95 Kbytes 页数：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：027N10N6；Package：PG-TDSON-8FL；OptiMOSTM 6 Power-Transistor, 100 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Optimized for high frequency switching and synchronous rectification •

文件：1.33909 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：027L10；Package：DFN5；MOSFET ??Power, Single N-Channel 100 V, 26 m, 28 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • NVMFWS027N10MCL − Wettable Flank Products • These Devices are Pb−Free, Halogen Free/BFR Free and are R

文件：152.11 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：027W10；Package：DFN5；MOSFET ??Power, Single N-Channel 100 V, 26 m, 28 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • NVMFWS027N10MCL − Wettable Flank Products • These Devices are Pb−Free, Halogen Free/BFR Free and are R

文件：152.11 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：027N06CL；Package：LFPAK8；MOSFET - Power, Dual N-Channel 60 V, 26.5 m, 21 A

Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：253.59 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：027N06CL；Package：LFPAK8；MOSFET - Power, Dual N-Channel 60 V, 27 m, 21 A

Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：253.78 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：027N04LS；Package：PG-TDSON-8；OptiMOS?? Power-Transistor

文件：386.68 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：027N06L；Package：PG-TDSON-8；OptiMOSTM Power-Transistor, 60 V

文件：1.14052 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：027N10N；Package：PG-TSON-8-3；OptiMOSTM Power-Transistor, 100 V

文件：923.03 Kbytes 页数：11 Pages

Infineon

英飞凌

SEMICONDUCTOR FAN HEATER

>>Compact heater >>Integrated thermostat >>Clip fixing >>Optical indicator >>Temperature safety cut-out

文件：204.27 Kbytes 页数：1 Pages

STEGO