7448991027

Marking：027；WE-MCRI SMT Molded Coupled Inductor

GeneralInformation: AmbientTemperature(referring toIR)-40upto+85°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

ISC027N10NM6

Marking：027N10N6；Package：PG-TDSON-8FL；OptiMOSTM 6 Power-Transistor, 100 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •Optimizedforhighfrequencyswitchingandsynchronousrectification •

NVMFS027N10MCLT1G

Marking：027L10；Package：DFN5；MOSFET ??Power, Single N-Channel 100 V, 26 m, 28 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •NVMFWS027N10MCL−WettableFlankProducts •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareR

NVMFWS027N10MCLT1G

Marking：027W10；Package：DFN5；MOSFET ??Power, Single N-Channel 100 V, 26 m, 28 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •NVMFWS027N10MCL−WettableFlankProducts •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareR

NVMJD027N06CLTWG

Marking：027N06CL；Package：LFPAK8；MOSFET - Power, Dual N-Channel 60 V, 26.5 m, 21 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVMJD027N06CLTWG

Marking：027N06CL；Package：LFPAK8；MOSFET - Power, Dual N-Channel 60 V, 27 m, 21 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

BSC027N04LSG

Marking：027N04LS；Package：PG-TDSON-8；OptiMOS?? Power-Transistor

BSC027N06LS5

Marking：027N06L；Package：PG-TDSON-8；OptiMOSTM Power-Transistor, 60 V

BSC027N10NS5

Marking：027N10N；Package：PG-TSON-8-3；OptiMOSTM Power-Transistor, 100 V