丝印：025N15N6；Package：PG-HDSOP-16；MOSFET OptiMOS™ 6 Power‑Transistor, 150 V

Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • MSL 1 classified according to J‑STD‑020

文件：1.24566 Mbytes 页数：13 Pages

Infineon

英飞凌

OptiMOS ™ 6 功率 MOSFET 150 V 正常电平，采用 TOLT 封装，用于顶部冷却

• RDS(on) 比 OptiMOS ™低 36％\n• FOMg 比 OptiMOS ™ 5 低 20%\n• 150 V 下业界最低的 Qrr\n• 与 OptiMOS ™ 5 相比，二极管软度得到改善\n• Vgs(th) 严格控制在 +/-500 mV 范围内\n• 高雪崩强度\n• 顶部冷却\n• 高额定电流\n• 最大 Tj 为 175°C 和 MSL1;

Infineon

英飞凌

MOSFET OptiMOS™ 6 Power‑Transistor, 150 V

Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • MSL 1 classified according to J‑STD‑020

文件：1.24861 Mbytes 页数：13 Pages

Infineon

英飞凌

MOSFET OptiMOS™ 6 Power‑Transistor, 150 V

Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • MSL 1 classified according to J‑STD‑020

文件：1.1709 Mbytes 页数：13 Pages

Infineon

英飞凌