丝印：025N15N6；Package：PG-HSOG-8；MOSFET OptiMOS™ 6 Power‑Transistor, 150 V

Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • MSL 1 classified according to J‑STD‑020

文件：1.24861 Mbytes 页数：13 Pages

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英飞凌

OptiMOS ™ 6 功率 MOSFET 150 V 正常电平采用 TOLG 封装，可实现更高的板载热循环性能

OptiMOS™ 6 power MOSFET 150 V normal level in TOLG package for higher thermal cycling on board performance • 36% lower RDS(on) than OptiMOS™ 5\n• Industry's lowest Qrr in 150 V\n• Improved diode softness vs OptiMOS™ 5\n• Tight Vgs(th) spread of +/-500 mV\n• High avalanche ruggedness\n• Gullwing leads\n• High current rating\n• Max Tj of 175°C and MSL1\n\n优势:\n• Low conduction and switching losses\n• S;

Infineon

英飞凌

MOSFET OptiMOS™ 6 Power‑Transistor, 150 V

Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • MSL 1 classified according to J‑STD‑020

文件：1.1709 Mbytes 页数：13 Pages

Infineon

英飞凌

MOSFET OptiMOS™ 6 Power‑Transistor, 150 V

Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • MSL 1 classified according to J‑STD‑020

文件：1.24566 Mbytes 页数：13 Pages

Infineon

英飞凌