丝印：030N10NS；Package：PG-TO220-3；MOSFET StrongIRFET™ 2 Power‑Transistor, 100 V

Features • Optimized for a wide range of applications • N‑channel, normal level • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：825.14 Kbytes 页数：11 Pages

Infineon

英飞凌

StrongIRFET ™ 2 单 N 沟道功率 MOSFET 100 V，采用 TO-220 封装

Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 3.0 mOhm, addressing a broad range of applications from low- to high-switching frequency.\n Additonally it is intended as the better price performance product compared to the IRF100B201.  • Broad availability from distribution\n• Excellent price/performance ratio\n• Ideal for high & low switching frequency\n• Industry standard through-hole package\n• High current rating\n• Capable of wave-soldering\n\n优势:\n• Multi-vendor compatibility\n• Right-fit products\n• Supports a wide variety ;

Infineon

英飞凌

StrongIRFETTM2Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.04416 Mbytes 页数：10 Pages

Infineon

英飞凌

StrongIRFETTM 2 Power-Transistor

文件：1.03348 Mbytes 页数：10 Pages

Infineon

英飞凌