丝印：019N08NS；Package：PG-TO220-3；StrongIRFETTM2Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.04173 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：019N08NS；Package：PG-TO220-3；StrongIRFETTM 2 Power-Transistor

文件：1.09462 Mbytes 页数：11 Pages

Infineon

英飞凌

StrongIRFETTM2Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.04173 Mbytes 页数：11 Pages

Infineon

英飞凌

StrongIRFETTM2Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.04173 Mbytes 页数：11 Pages

Infineon

英飞凌

StrongIRFET™ 2 single n-channel power MOSFET 80V in TO-220 package

\n优势:\n• Multi-vendor compatibility\n• Right-fit products\n• Supports a wide variety of applications\n• Standard pinout allows for drop-in replacement\n• Increased current carrying capability\n• Ease of manufacturing;

Infineon

英飞凌