OptiMOS?? Power-Transistor

文件：246.18 Kbytes 页数：10 Pages

INFINEON

英飞凌

OptiMOS?? Power-Transistor

文件：246.18 Kbytes 页数：10 Pages

INFINEON

英飞凌

包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH 40V 90A TO220-3

INFINEON

英飞凌

MOSFET – Power, Dual N-Channel 40 V, 23 m, 25 A

Features • Small Footprint for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：140.82 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET – Power, Dual N-Channel 40 V, 23 m, 25 A

Features • Small Footprint for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：140.82 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description T he TF023N04NG uses advanced trench technology and design to provide excellent RDS(ON) withlowgate charge. It can be used in a wide variety ofapplications. ● Features Advance device constructure Low RDS(ON) to minimize conduction loss Low Gate Charge for fast switchin

文件：4.35827 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体