丝印：016N06NS；Package：PG-TO263-7；StrongIRFETTM 2 Power-Transistor

Features • Optimized for a wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.04978 Mbytes 页数：11 Pages

INFINEON

英飞凌

StrongIRFET ™ 2 单 N 沟道功率 MOSFET 60 V，采用 D²PAK 7 引脚封装

\n优势:\n• Multi-vendor compatibility\n• Right-fit products\n• Supports a wide variety of applications\n• Standard pinout allows for drop-in replacement\n• Increased current carrying capability\n• Ease of manufacturing;

Infineon

英飞凌

StrongIRFETTM2 Power-Transistor

Features • Optimized for wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：852.74 Kbytes 页数：11 Pages

INFINEON

英飞凌

TDSON-8

INFINEON

英飞凌

上传：深圳市富源半导体有限公司

TDSON8

INFINEON/英飞凌

上传：深圳市钜韬电子有限公司