丝印：016N06SC；Package：PG-WSON-8-2；OptiMOSTM Power-MOSFET, 60 V

Features • Double side cooled package-with lowest Juntion-top thermal resistance • 175°C rated • Optimized for synchronous rectification • 100 avalanche tested • Superior thermal resistance • N-channel • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • High

文件：997.37 Kbytes 页数：11 Pages

Infineon

英飞凌

OptiMOS ™ 5 60 V 功率 MOSFET 采用 SuperSO8 DSC 封装，具有双面冷却功能，可增强热性能

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Infineon

英飞凌

OptiMOSTM Power-MOSFET, 60 V

文件：1.41665 Mbytes 页数：13 Pages

Infineon

英飞凌

MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 16.3 m, 32 A

文件：225.64 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET- Power, Single N-Channel, SO-8FL 60 V, 15.6 m, 33 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWS016N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

文件：189.19 Kbytes 页数：7 Pages

ONSEMI

安森美半导体