MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 16.3 m, 32 A

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丝印：16DN6C；Package：SO8FLDual；MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 16.3 m, 32 A

文件：225.64 Kbytes 页数：8 Pages

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Power MOSFET Power, N-Channel, DUAL SO8FL, 60 V, 16.3 mΩ, 32 A

Industrial Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. • Small Footprint (5x6 mm)\n• Compact Design\n• Low RDS(on)\n• Minimize Conduction Losses\n• Low QG and Capacitance\n• Minimize Driver Losses\n• These Devices are Pb-Free and are RoHS Compliant;

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MOSFET- Power, Single N-Channel, SO-8FL 60 V, 15.6 m, 33 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWS016N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

文件：189.19 Kbytes 页数：7 Pages

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MOSFET - Power, Single N-Channel 60 V, 16 m, 33 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：208.97 Kbytes 页数：6 Pages

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安森美半导体

MOSFET - Power, Single N-Channel 60 V, 16 m, 33 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：208.97 Kbytes 页数：6 Pages

ONSEMI

安森美半导体