IPP016N08NF2S说明书PDF资料批发供应英飞凌-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
IPP016N08NF2S	文件：1.05247 Mbytes Page：11 Pages	丝印：016N08NS；Package：PG-TO220-3；StrongIRFETTM2Power-Transistor Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 文件：1.05247 Mbytes 页数：11 Pages	Infineon 英飞凌	Infineon
IPP016N08NF2S_V01	文件：1.05247 Mbytes Page：11 Pages	StrongIRFETTM2Power-Transistor Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 文件：1.05247 Mbytes 页数：11 Pages	Infineon 英飞凌	Infineon
IPP016N08NF2SAKMA1	文件：1.05247 Mbytes Page：11 Pages	StrongIRFETTM2Power-Transistor Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 文件：1.05247 Mbytes 页数：11 Pages	Infineon 英飞凌	Infineon
IPP016N08NF2S	文件：300 bytes Page：1 Pages	StrongIRFET ™ 2 单 N 沟道功率 MOSFET 80 V，采用 TO-220 封装 \n优势:\n• Multi-vendor compatibility\n• Right-fit products\n• Supports a wide variety of applications\n• Standard pinout allows for drop-in replacement\n• Increased current carrying capability\n• Ease of manufacturing;	Infineon 英飞凌	Infineon

更多IPP016N08NF2S供应商更新时间2025-10-11 10:05:00