丝印：013N；Package：WDFNW6；MOSFET - Power, Single N-Channel 30 V, 13 m, 35 A

Features • Small Footprint for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：160.24 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：013N06NS；Package：PG-TO263-3；StrongIRFETTM2 Power-Transistor

Features • Optimized for wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.05965 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：013N04NS；Package：PG-TO263-7；StrongIRFETTM2 Power-Transistor

Features • Optimized for wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.05586 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：013N04NS；Package：PG-TO220-3；MOSFET StrongIRFETTM2 Power-Transistor

Features • Optimized for wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：989.65 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：013N08LF；Package：PG-HSOF-8；OptiMOSTM 5 Linear FET, 80 V

Features • Ideal for hot-swap and e-fuse applications • Very low on-resistance RDS(on) • Wide safe operating area SOA • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：771.75 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：013N08LH；Package：LFPAK4；MOSFET - Power, Single N-Channel 80 V, 13.1 m, 42 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：283.8 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：013N08LH；Package：LFPAK4；MOSFET - Power, Single N-Channel 80 V, 13.1 m, 42 A

文件：283.29 Kbytes 页数：7 Pages

ONSEMI

安森美半导体