NVLJWS013N03CLTAG

Marking：013N；Package：WDFNW6；MOSFET - Power, Single N-Channel 30 V, 13 m, 35 A

Features •SmallFootprintforCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

IPB013N06NF2S

Marking：013N06NS；Package：PG-TO263-3；StrongIRFETTM2 Power-Transistor

Features •Optimizedforwiderangeofapplications •N-channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IPF013N04NF2S

Marking：013N04NS；Package：PG-TO263-7；StrongIRFETTM2 Power-Transistor

Features •Optimizedforwiderangeofapplications •N-channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IPP013N04NF2S

Marking：013N04NS；Package：PG-TO220-3；MOSFET StrongIRFETTM2 Power-Transistor

Features •Optimizedforwiderangeofapplications •N-channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IPT013N08NM5LF

Marking：013N08LF；Package：PG-HSOF-8；OptiMOSTM 5 Linear FET, 80 V

Features •Idealforhot-swapande-fuseapplications •Verylowon-resistanceRDS(on) •WidesafeoperatingareaSOA •N-channel,normallevel •100avalanchetested •Pb-freeplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

NVMYS013N08LHTWG

Marking：013N08LH；Package：LFPAK4；MOSFET - Power, Single N-Channel 80 V, 13.1 m, 42 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK4Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NTMYS013N08LHTWG

Marking：013N08LH；Package：LFPAK4；MOSFET - Power, Single N-Channel 80 V, 13.1 m, 42 A