丝印：013N08LH；Package：LFPAK4；MOSFET - Power, Single N-Channel 80 V, 13.1 m, 42 A

文件：283.29 Kbytes 页数：7 Pages

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安森美半导体

MOSFET - Power, Single N-Channel 80 V, 13.1 m, 42 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：283.8 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 80 V, 13.1 m, 42 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：283.8 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 80 V, 13.1 m, 42 A

文件：283.29 Kbytes 页数：7 Pages

ONSEMI

安森美半导体