型号：NVTYS014P04M8LTWG；Package：LFPAK33；MOSFET – Power, Single P-Channel −40 V, 13.5 m, −53 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR−Free and are RoHS Compliant

文件：337.37 Kbytes 页数：7 Pages

安森美半导体

型号：TLE5014P16；Package：PG-TDSO-16；Giant Magneto Resistance (GMR)-based principle

文件：1.35531 Mbytes 页数：45 Pages

英飞凌

型号：NVMFS014P04M8LT1G；Package：DFN5；MOSFET ??Power, Single P-Channel-40 V, 13.8 m, -52.1 A

Features • Small Footprint for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFWS014P04M8L − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR−Free and are RoHS Compliant

文件：223.36 Kbytes 页数：7 Pages

安森美半导体

型号：NVMFWS014P04M8LT1G；Package：DFN5；MOSFET ??Power, Single P-Channel-40 V, 13.8 m, -52.1 A

Features • Small Footprint for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFWS014P04M8L − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR−Free and are RoHS Compliant

文件：223.36 Kbytes 页数：7 Pages

安森美半导体

型号：TLE5014P16D；Package：PG-TDSO-16；Giant Magneto Resistance (GMR)-based principle

文件：438.29 Kbytes 页数：13 Pages

英飞凌