丝印：014P04；Package：DFN5；MOSFET ??Power, Single P-Channel-40 V, 13.8 m, -52.1 A

Features • Small Footprint for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFWS014P04M8L − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR−Free and are RoHS Compliant

文件：223.36 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET, Single P-Channel, -40 V, 13.8 mΩ @ -10V, -52.1 A

Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Small Footprint (3x3 mm)\n• Compact Design\n• Low RDS (on)\n• Minimize Conduction Losses\n• Low Capacitance\n• Minimize Driver Losses\n• AEC−Q101 Qualified and PPAP Capable\n• Suitable for Automotive Applications\n• These Devices are Pb−Free, Halogen Free/BFR−Free and are RoHS Compliant;

ONSEMI

安森美半导体

MOSFET ??Power, Single P-Channel-40 V, 13.8 m, -52.1 A

Features • Small Footprint for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFWS014P04M8L − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR−Free and are RoHS Compliant

文件：223.36 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

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QFN8

ON

上传：深圳市鼎欣微电子有限公司

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8-PowerTDFN

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上传：深圳市广弘电子有限公司