丝印：015N06CL；Package：LFPAK8；MOSFET - Power, Dual N-Channel 60 V, 14.4 m, 35 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：256.16 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：015N06CL；Package：LFPAK8；MOSFET - Power, Dual N-Channel 60 V, 14.4 m, 35 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：255.65 Kbytes 页数：6 Pages

ONSEMI

安森美半导体