SMD1812B014TF

Marking：014；Positive Temperature Coefficient (PTC) Data Sheet

Description The1812seriesprovidessurfacemountresettableovercurrentprotectionwith holdingcurrentfrom0.1Ato3.0A.Thisseriesofferscompleteportfoliointermsof holdingcurrentandworkingvoltage,andissuitableforwiderangeofapplication. Features ■RoHScompliantandle

ADS1014LIDGSR

Marking：014L；Package：VSSOP；ADS101xL Ultra-Small, Low-Power, 12-Bit, 3.3-kSPS ADCs With PGA, Comparator and 1.8-V I2C Bus Voltage Support

1Features •Noise-freeresolution:12bits •Supplyvoltagerange:2.0Vto3.6V •Lowcurrentconsumption: –150μA(continuous-conversionmode) •Programmabledatarate: 128SPSto3.3kSPS •Single-cyclesettling •Internallow-driftvoltagereference •Internaloscillator •Digital

ADS1014LIDGSR

Marking：014L；Package：VSSOP；ADS101xL Ultra-Small, Low-Power, 12-Bit, 3.3-kSPS ADCs With PGA, Comparator and 1.8-V I2C Bus Voltage Support

1Features •Noise-freeresolution:12bits •Supplyvoltagerange:2.0Vto3.6V •Lowcurrentconsumption: –150μA(continuous-conversionmode) •Programmabledatarate: 128SPSto3.3kSPS •Single-cyclesettling •Internallow-driftvoltagereference •Internaloscillator •Digital

BSC014N03LSG

Marking：014N03LS；Package：PG-TDSON-8；OptiMOS?? Power-MOSFET

Features •FastswitchingMOSFETforSMPS •OptimizedtechnologyforDC/DCconverters •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel •Logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Superiorthermalresistance •Avala

BSC014N04LS

Marking：014N04LS；Package：TDSON-8FL；OptiMOSTM Power-MOSFET, 40 V

Features •Optimizedforsynchronousrectification •Verylowon-stateresistanceRDS(on) •100avalanchetested •Superiorthermalresistance •N-channel,logiclevel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjoin

IPB014N04NF2S

Marking：014N04NS；Package：PG-TO263-3；StrongIRFETTM2 Power-Transistor

Features •Optimizedforwiderangeofapplications •N-channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IPF014N08NF2S

Marking：014N08NS；Package：PG-TO263-7；StrongIRFETTM 2 Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IPP014N06NF2S

Marking：014N06NS；Package：PG-TO220-3；StrongIRFETTM2 Power-Transistor

Features •Optimizedforwiderangeofapplications •N-channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IPTG014N10NM5

Marking：014N10N5；Package：PG-HSOG-8-1；OptiMOSTM 5 Power-Transistor, 100 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Idealforhighfrequencyswitchingandsync.rec.

NVMFS014P04M8LT1G

Marking：014P04；Package：DFN5；MOSFET ??Power, Single P-Channel-40 V, 13.8 m, -52.1 A

Features •SmallFootprintforCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •NVMFWS014P04M8L−WettableFlanksProduct •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFR−FreeandareRoHSCompliant