BSC014N06NST

Marking：014N06NT；Package：TDSON-8FL；OptiMOSTM Power-Transistor, 60 V

IPT014N08NM5

Marking：014N08N5；Package：PG-HSOF-8；OptiMOSTM5 Power-Transistor, 80 V

NTMYS014N06CLTWG

Marking：014N06CL；Package：LFPAK4；Power MOSFET 60 V, 15 m, 37 A, Single N?묬hannel

PSMN014-80YL

Marking：014L80；Package：LFPAK56Power-SO8；N-channel 80 V, 14 m廓 logic level MOSFET in LFPAK56

TLE5014C16

Marking：014C；Package：PG-TDSO-16；Giant Magneto Resistance (GMR)-based principle

TLE5014C16D

Marking：014CD；Package：PG-TDSO-16；Giant Magneto Resistance (GMR)-based principle

TLE5014P16

Marking：014P；Package：PG-TDSO-16；Giant Magneto Resistance (GMR)-based principle

TLE5014P16D

Marking：014PD；Package：PG-TDSO-16；Giant Magneto Resistance (GMR)-based principle

TLE5014S16

Marking：014S；Package：PG-TDSO-16；Giant Magneto Resistance (GMR)-based principle

TLE5014S16D

Marking：014SD；Package：PG-TDSO-16；Giant Magneto Resistance (GMR)-based principle