OptiMOS™ 5 power MOSFET with enhanced temperature rating for improved robustness

OptiMOS™ 5 power MOSFET in SuperSO8 package offers the latest technology together with temperature improvements in the package. This new combination enables higher power density as well as improved robustness.\n Compared to lower rated devices, the 175°C TJ_MAX feature offers either more power • Low RDS(on) \n• Optimized for synchronous rectification\n• Enhanced 175°C capability in SuperSO8\n\n优势:\n• Longer life time\n• Highest efficiency and power density\n• Highest system reliability\n• Thermal robustness\n ;

Infineon

英飞凌

丝印：010N04LT；Package：TDSON-8FL；OptiMOSTM Power-MOSFET, 40 V

文件：1.43718 Mbytes 页数：13 Pages

Infineon

英飞凌

Power MOSFET 40 V, 10.3 m, 38 A, Single N?묬hannel

文件：321.59 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET 40 V, 10.3 m, 38 A, Single N?묬hannel

文件：321.59 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 10.3 m, 38 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：339.45 Kbytes 页数：7 Pages

ONSEMI

安森美半导体