型号：NVTYS010N04CTWG；Package：LFPAK33；MOSFET ??Power, Single N-Channel 40 V, 12 m, 38 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：336.85 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

型号：NVMYS010N04CLTWG；Package：LFPAK4；MOSFET ??Power, Single N-Channel 40 V, 10.3 m, 38 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：339.45 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

型号：NVTYS010N04CLTWG；Package：LFPAK33；MOSFET ??Power, Single N-Channel 40 V, 9.5 m, 43 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：332.09 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

型号：NTMYS010N04CLTWG；Package：LFPAK4；Power MOSFET 40 V, 10.3 m, 38 A, Single N?묬hannel

文件：321.59 Kbytes 页数：7 Pages

ONSEMI

安森美半导体