PDTD123EQA

Marking：010110；Package：DFN1010D-3；50 V, 500 mA NPN resistor-equipped transistors

Generaldescription NPNResistor-EquippedTransistor(RET)familyinaleadlessultrasmallDFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderablesidepads. Featuresandbenefits ■500mAoutputcurrentcapability ■Reducedpickandplacecosts ■Built

PDTD123EQA

Marking：010110；Package：SOT1215；50 V, 500 mA NPN resistor-equipped transistors

Featuresandbenefits 500mAoutputcurrentcapability Built-inbiasresistors 10resistorratiotolerance Simplifiescircuitdesign Reducescomponentcount Reducedpickandplacecosts Lowpackageheightof0.37mm SuitableforAutomaticOptical Inspection(AOI)ofsold

BC856BMB

Marking：01011010；Package：DFN1006B-3；60 V, 100 mA PNP general-purpose transistor

PMZB600UNE

Marking：01011000；Package：DFN1006B-3；20 V, N-channel Trench MOSFET

PMZB950UPE

Marking：01011001；Package：DFN1006B-3；20 V, P-channel Trench MOSFET