PDTD123EQA

Marking：010110；Package：DFN1010D-3；50 V, 500 mA NPN resistor-equipped transistors

Generaldescription NPNResistor-EquippedTransistor(RET)familyinaleadlessultrasmallDFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderablesidepads. Featuresandbenefits ■500mAoutputcurrentcapability ■Reducedpickandplacecosts ■Built

PDTD123EQA

Marking：010110；Package：SOT1215；50 V, 500 mA NPN resistor-equipped transistors

Featuresandbenefits 500mAoutputcurrentcapability Built-inbiasresistors 10resistorratiotolerance Simplifiescircuitdesign Reducescomponentcount Reducedpickandplacecosts Lowpackageheightof0.37mm SuitableforAutomaticOptical Inspection(AOI)ofsold

PDTD123EQA

50 V, 500 mA PNP resistor-equipped transistors

Featuresandbenefits 500mAoutputcurrentcapability Built-inbiasresistors 10resistorratiotolerance Simplifiescircuitdesign Reducescomponentcount Reducedpickandplacecosts Lowpackageheightof0.37mm SuitableforAutomaticOptical Inspection(AOI)ofsold

PDTD123EQAZ

Package：3-XDFN 裸露焊盘；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS NPN 3DFN

Nexperia USA Inc.

PDTD123ES

NPN500mA,50Vresistor-equippedtransistors;R1=2.2kW,R2=2.2kW

Generaldescription 500mANPNResistor-EquippedTransistors(RET)family. Features ■Built-inbiasresistors ■Reducescomponentcount ■Simplifiescircuitdesign ■Reducespickandplacecosts ■500mAoutputcurrentcapability ■±10resistorratiotolerance Applications ■Digital

PDTD123ES

NPN500mA,50Vresistor-equippedtransistors;R1=2.2kΩ,R2=2.2kΩ

Features *Built-inbiasresistors *Simplifiescircuitdesign *500mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

PDTD123ET

LowVCEsat(BISS)transistors

PDTD123ET

NPN500mA,50Vresistor-equippedtransistors;R1=2.2kW,R2=2.2kW

Generaldescription 500mANPNResistor-EquippedTransistors(RET)family. Features ■Built-inbiasresistors ■Reducescomponentcount ■Simplifiescircuitdesign ■Reducespickandplacecosts ■500mAoutputcurrentcapability ■±10resistorratiotolerance Applications ■Digital

PDTD123ET

NPN500mA,50Vresistor-equippedtransistors;R1=2.2kΩ,R2=2.2kΩ

Features *Built-inbiasresistors *Simplifiescircuitdesign *500mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

PDTD123ET

50V,500mANPNresistor-equippedtransistor;R1=2.2kΩ,R2=2.2kΩ

1.Generaldescription NPNResistor-EquippedTransistor(RET)inasmallSOT23Surface-MountedDevice(SMD)plastic package. PNPcomplement:PDTB123ET 2.Featuresandbenefits •Built-inbiasresistors •Simplifiescircuitdesign •500mAoutputcurrentcapability •Reducescomponentcou