PESD5V0S1ULD

Marking：0100；Package：DFN1006D-2；Unidirectional ESD protection diode

1.Generaldescription UnidirectionalElectroStaticDischarge(ESD)protectiondiodedesignedtoprotectonesignal linefromthedamagecausedbyESDandothertransients.ThedeviceishousedinaSOD882D leadlessultrasmallSurface-MountedDevice(SMD)plasticpackagewithvisibleandsolde

PESD5V0X2UMB-Q

Marking：0100；Package：DFN1006B-3；Ultra low capacitance unidirectional double ESD protection diode

1.Generaldescription UltralowcapacitanceunidirectionaldoubleElectroStaticDischarge(ESD)protectiondiodeina DFN1006B-3(SOT883B)leadlessultrasmallSurface-MountedDevice(SMD)plasticpackage, designedtoprotectuptotwosignallinesfromthedamagecausedbyESDandothertrans

PMEG2010EPK

Marking：0100；Package：DFN1608D-2；20 V, 1 A low VF MEGA Schottky barrier rectifier

1.1Generaldescription PlanarMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierwithan integratedguardringforstressprotection,encapsulatedinaleadlessultrasmall SOD1608(DFN1608D-2)Surface-MountedDevice(SMD)plasticpackagewithvisible andsolderableside

PMZB350UPE

Marking：0100；Package：SOT883B；20 V, single P-channel Trench MOSFET

1.1Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmall DFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 1.2Featuresandbenefits •Lowthresholdvoltage •Veryfastswitching •TrenchMOSFE

2PA1774QMB

Marking：01000000；Package：SOT883B；40 V, 100 mA PNP general-purpose transistors

Featuresandbenefits *LeadlessultrasmallSMDplastic package *PowerdissipationcomparabletoSOT23 *Lowpackageheightof0.37mm *AEC-Q101qualified

BC846BMB

Marking：01001011；Package：DFN1006B-3；65 V, 100 mA NPN general-purpose transistor

Featuresandbenefits •LeadlessultrasmallSMDplasticpackage •Lowpackageheightof0.37mm •PowerdissipationcomparabletoSOT23 •AEC-Q101qualified

BC846BMB/S501

Marking：01001011；Package：DFN1006B-3；65 V, 100 mA NPN general-purpose transistor

Featuresandbenefits •LeadlessultrasmallSMDplasticpackage •Lowpackageheightof0.37mm •PowerdissipationcomparabletoSOT23 •AEC-Q101qualified

BC846BMBSLASHS501

Marking：01001011；Package：DFN1006B-3；65 V, 100 mA NPN general-purpose transistor

Featuresandbenefits •LeadlessultrasmallSMDplasticpackage •Lowpackageheightof0.37mm •PowerdissipationcomparabletoSOT23 •AEC-Q101qualified

BC847AMB

Marking：01000001；Package：SOT883B；45 V, 100 mA NPN general-purpose transistors

Featuresandbenefits LeadlessultrasmallSMDplastic package PowerdissipationcomparabletoSOT23 Lowpackageheightof0.37mm AEC-Q101qualified

BC847BMB

Marking：01000010；Package：SOT883B；45 V, 100 mA NPN general-purpose transistors

Featuresandbenefits LeadlessultrasmallSMDplastic package PowerdissipationcomparabletoSOT23 Lowpackageheightof0.37mm AEC-Q101qualified