丝印：0100；Package：DFN1006D-2；Unidirectional ESD protection diode

1. General description Unidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package with visible and solde

文件：262.98 Kbytes 页数：12 Pages

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丝印：0100；Package：DFN1006B-3；Ultra low capacitance unidirectional double ESD protection diode

1. General description Ultra low capacitance unidirectional double ElectroStatic Discharge (ESD) protection diode in a DFN1006B-3 (SOT883B) leadless ultra small Surface-Mounted Device (SMD) plastic package, designed to protect up to two signal lines from the damage caused by ESD and other trans

文件：254.84 Kbytes 页数：12 Pages

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安世安世半导体(中国)有限公司

丝印：0100；Package：DFN1608D-2；20 V, 1 A low VF MEGA Schottky barrier rectifier

1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small SOD1608 (DFN1608D-2) Surface-Mounted Device (SMD) plastic package with visible and solderable side

文件：1.23202 Mbytes 页数：15 Pages

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安世安世半导体(中国)有限公司

丝印：0100；Package：SOT883B；20 V, single P-channel Trench MOSFET

1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFE

文件：701 Kbytes 页数：14 Pages

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安世安世半导体(中国)有限公司

丝印：01000000；Package：SOT883B；40 V, 100 mA PNP general-purpose transistors

Features and benefits * Leadless ultra small SMD plastic package * Power dissipation comparable to SOT23 * Low package height of 0.37 mm * AEC-Q101 qualified

文件：988.04 Kbytes 页数：12 Pages

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安世安世半导体(中国)有限公司

丝印：01001011；Package：DFN1006B-3；65 V, 100 mA NPN general-purpose transistor

Features and benefits • Leadless ultra small SMD plastic package • Low package height of 0.37 mm • Power dissipation comparable to SOT23 • AEC-Q101 qualified

文件：462.56 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：01001011；Package：DFN1006B-3；65 V, 100 mA NPN general-purpose transistor

Features and benefits • Leadless ultra small SMD plastic package • Low package height of 0.37 mm • Power dissipation comparable to SOT23 • AEC-Q101 qualified

文件：462.56 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：01001011；Package：DFN1006B-3；65 V, 100 mA NPN general-purpose transistor

Features and benefits • Leadless ultra small SMD plastic package • Low package height of 0.37 mm • Power dissipation comparable to SOT23 • AEC-Q101 qualified

文件：462.56 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：01000001；Package：SOT883B；45 V, 100 mA NPN general-purpose transistors

Features and benefits  Leadless ultra small SMD plastic package  Power dissipation comparable to SOT23  Low package height of 0.37 mm  AEC-Q101 qualified

文件：1.00773 Mbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：01000010；Package：SOT883B；45 V, 100 mA NPN general-purpose transistors

Features and benefits  Leadless ultra small SMD plastic package  Power dissipation comparable to SOT23  Low package height of 0.37 mm  AEC-Q101 qualified

文件：1.00773 Mbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司