BC847CMB

Marking：01000011；Package：SOT883B；45 V, 100 mA NPN general-purpose transistors

Featuresandbenefits LeadlessultrasmallSMDplastic package PowerdissipationcomparabletoSOT23 Lowpackageheightof0.37mm AEC-Q101qualified

BC847QAPN

Marking：010000；Package：DFN1010B-6；45 V, 100 mA NPN/PNP general-purpose transistor

Featuresandbenefits •Reducescomponentcount •Reducespickandplacecosts •AEC-Q101qualified •Lowpackageheightof0.37mm

BC857AMB

Marking：01000100；Package：SOT883B；45 V, 100 mA PNP general-purpose transistors

Featuresandbenefits LeadlessultrasmallSMDplastic package PowerdissipationcomparabletoSOT23 Lowpackageheightof0.37mm AEC-Q101qualified

BC857BMB

Marking：01000101；Package：SOT883B；45 V, 100 mA PNP general-purpose transistors

Featuresandbenefits LeadlessultrasmallSMDplastic package PowerdissipationcomparabletoSOT23 Lowpackageheightof0.37mm AEC-Q101qualified

BC857CMB

Marking：01000110；Package：SOT883B；45 V, 100 mA PNP general-purpose transistors

Featuresandbenefits LeadlessultrasmallSMDplastic package PowerdissipationcomparabletoSOT23 Lowpackageheightof0.37mm AEC-Q101qualified

BC857CQA

Marking：010001；Package：SOT1215；45 V, 100 mA PNP general-purpose transistors

Featuresandbenefits General-purposetransistors Threecurrentgainselections Lowpackageheightof0.37mm SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint AEC-Q101qualified

PBSS4130QA

Marking：010010；Package：DFN1010D-3；30 V, 1 A NPN low VCEsat (BISS) transistor

1.Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessultrasmall DFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisible andsolderablesidepads. PNPcomplement:PBSS5130QA. 2.Featuresandbenefits •Verylowcollector-

PDTA123JMB

Marking：01001001；Package：SOT883B；PNP resistor-equipped transistor; R1 = 2.2 k廓, R2 = 47 k廓

Generaldescription PNPResistor-EquippedTransistor(RET)inaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PDTC123JMB. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiasresistors ■

PDTC114EMB

Marking：01001010；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ

Featuresandbenefits 100mAoutputcurrentcapability Reducescomponentcount Built-inbiasresistors Reducespickandplacecosts Simplifiescircuitdesign AEC-Q101qualified LeadlessultrasmallSMDplastic package Lowpackageheightof0.37mm

PDTD113EQA

Marking：010011；Package：DFN1010D-3；50 V, 500 mA NPN resistor-equipped transistors

Generaldescription NPNResistor-EquippedTransistor(RET)familyinaleadlessultrasmallDFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderablesidepads. Featuresandbenefits ■500mAoutputcurrentcapability ■Reducedpickandplacecosts ■Built