型号：PBSS4130QA；Package：DFN1010D-3；30 V, 1 A NPN low VCEsat (BISS) transistor

1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBSS5130QA. 2. Features and benefits • Very low collector-

文件：743.72 Kbytes 页数：17 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：BC846BMB；Package：DFN1006B-3；65 V, 100 mA NPN general-purpose transistor

Features and benefits • Leadless ultra small SMD plastic package • Low package height of 0.37 mm • Power dissipation comparable to SOT23 • AEC-Q101 qualified

文件：462.56 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：BC846BMB/S501；Package：DFN1006B-3；65 V, 100 mA NPN general-purpose transistor

Features and benefits • Leadless ultra small SMD plastic package • Low package height of 0.37 mm • Power dissipation comparable to SOT23 • AEC-Q101 qualified

文件：462.56 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：BC846BMBSLASHS501；Package：DFN1006B-3；65 V, 100 mA NPN general-purpose transistor

Features and benefits • Leadless ultra small SMD plastic package • Low package height of 0.37 mm • Power dissipation comparable to SOT23 • AEC-Q101 qualified

文件：462.56 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：PDTA123JMB；Package：SOT883B；PNP resistor-equipped transistor; R1 = 2.2 k廓, R2 = 47 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123JMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

文件：842.86 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：PDTC114EMB；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ

Features and benefits  100 mA output current capability  Reduces component count  Built-in bias resistors  Reduces pick and place costs  Simplifies circuit design  AEC-Q101 qualified  Leadless ultra small SMD plastic package  Low package height of 0.37 mm

文件：834.27 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：PMBT3906MB；Package：DFN1006B-3；40 V, 200 mA PNP switching transistor

General description PNP single switching transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PMBT3904MB. Features and benefits • Single general-purpose switching transistor • AEC-Q101 qualified • Ultra small SMD plastic pack

文件：254.17 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：010010；Packaged part Bulk part

文件：53.93 Kbytes 页数：1 Pages

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