NPN resistor-equipped transistor; R1 = 10 k廓, R2 = 10 k廓

General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. ​​​​​​​ PNP complement: PDTA114EMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resi

文件：699.84 Kbytes 页数：11 Pages

恩XP

丝印：01001010；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ

Features and benefits  100 mA output current capability  Reduces component count  Built-in bias resistors  Reduces pick and place costs  Simplifies circuit design  AEC-Q101 qualified  Leadless ultra small SMD plastic package  Low package height of 0.37 mm

文件：834.27 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ

General description\nNPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.\nPNP complement: PDTA114EMB.

恩XP

恩智浦

NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ

NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA114EMB. • 100 mA output current capability\n• Reduces component count\n• Built-in bias resistors\n• Reduces pick and place costs\n• Simplifies circuit design\n• AEC-Q101 qualified\n• Leadless ultra small SMD plastic package\n• Low package height of 0.37 mm;

Nexperia

安世

Package：3-XFDFN；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS NPN 50V DFN1006B-3

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司