丝印：01001001；Package：SOT883B；PNP resistor-equipped transistor; R1 = 2.2 k廓, R2 = 47 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123JMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

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NEXPERIA

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PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ

General description\nPNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.\nNPN complement: PDTC123JMB.Features and benefits\n■ 100 mA output current capability\n■ Reduces component count\n■ Built-in bias resistors\n■ Redu

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PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ

PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123JMB. • 100 mA output current capability\n• Reduces component count\n• Built-in bias resistors\n• Reduces pick and place costs\n• Simplifies circuit design\n• AEC-Q101 qualified\n• Leadless ultra small SMD plastic package\n• Low package height of 0.37 mm;

Nexperia

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Package：3-XFDFN；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS PNP 50V DFN1006B-3

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