PMEG2005ELD

Marking：0101；Package：SOD882D；20 V, 0.5 A low VF MEGA Schottky barrier rectifier

1.1Generaldescription PlanarMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierwithan integratedguardringforstressprotection,encapsulatedinaSOD882Dleadlessultra smallSurface-MountedDevice(SMD)plasticpackagewithvisibleandsolderableside pads. 1.2F

PMZB290UNE2

Marking：0101；Package：SOT883B；20 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmall DFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 2.Featuresandbenefits •TrenchMOSFETtechnology •Lowthresholdvoltage •Veryfast

PMZB320UPE

Marking：0101；Package：SOT883B；30 V, P-channel Trench MOSFET

1.Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmall DFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 2.Featuresandbenefits •TrenchMOSFETtechnology •Lowthresholdvoltage •Veryfast

RMA9N20S5

Marking：0101；Package：SOT523；N-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=20V,ID=0.87A RDS(ON)

BC807-25QA

Marking：010100；Package：DFN1010D-3；45 V, 500 mA PNP general-purpose transistors

Featuresandbenefits *General-purposetransistor *Twocurrentgainselections *Lowpackageheightof0.37mm *AEC-Q101qualified

PDTB123EQA

Marking：010101；Package：SOT1215；50 V, 500 mA PNP resistor-equipped transistors

1.1Generaldescription PNPResistor-EquippedTransistor(RET)familyinaleadlessultrasmallDFN1010D-3 (SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderable sidepads. 1.2Featuresandbenefits 1.3Applications Table1.Productoverview TypenumberR1R2Pac

PDTB123EQA

Marking：010101；Package：SOT1215；50 V, 500 mA PNP resistor-equipped transistors

Featuresandbenefits 500mAoutputcurrentcapability Built-inbiasresistors 10resistorratiotolerance Simplifiescircuitdesign Reducescomponentcount Reducedpickandplacecosts Lowpackageheightof0.37mm SuitableforAutomaticOptical Inspection(AOI)ofsold

PDTB143EQA

Marking：010111；Package：SOT1215；50 V, 500 mA PNP resistor-equipped transistors

1.1Generaldescription PNPResistor-EquippedTransistor(RET)familyinaleadlessultrasmallDFN1010D-3 (SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderable sidepads. 1.2Featuresandbenefits 1.3Applications Table1.Productoverview TypenumberR1R2Pac

PDTB143EQA

Marking：010111；Package：DFN1010D-3；50 V, 500 mA PNP resistor-equipped transistors

Featuresandbenefits 500mAoutputcurrentcapability Built-inbiasresistors 10resistorratiotolerance Simplifiescircuitdesign Reducescomponentcount Reducedpickandplacecosts Lowpackageheightof0.37mm SuitableforAutomaticOptical Inspection(AOI)ofsold

PDTD123EQA

Marking：010110；Package：DFN1010D-3；50 V, 500 mA NPN resistor-equipped transistors

Generaldescription NPNResistor-EquippedTransistor(RET)familyinaleadlessultrasmallDFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderablesidepads. Featuresandbenefits ■500mAoutputcurrentcapability ■Reducedpickandplacecosts ■Built