PDTD123EQA

Marking：010110；Package：SOT1215；50 V, 500 mA NPN resistor-equipped transistors

Featuresandbenefits 500mAoutputcurrentcapability Built-inbiasresistors 10resistorratiotolerance Simplifiescircuitdesign Reducescomponentcount Reducedpickandplacecosts Lowpackageheightof0.37mm SuitableforAutomaticOptical Inspection(AOI)ofsold

BC856BMB

Marking：01011010；Package：DFN1006B-3；60 V, 100 mA PNP general-purpose transistor

NX7002BKMB

Marking：01010111；Package：DFN1006B-3；60 V, N-channel Trench MOSFET

PDTB123EQA

Marking：010101；Package：DFN1010D-3；50 V, 500 mA PNP resistor-equipped transistors

PDTB143EQA

Marking：010111；Package：DFN1010D-3；50 V, 500 mA PNP resistor-equipped transistors

PMZB1200UPE

Marking：01010110；Package：DFN1006B-3；30 V, P-channel Trench MOSFET

PMZB150UNE

Marking：01010000；Package：DFN1006B-3；20 V, N-channel Trench MOSFET

PMZB200UNE

Marking：01010001；Package：DFN1006B-3；30 V, N-channel Trench MOSFET

PMZB390UNE

Marking：01010100；Package：DFN1006B-3；30 V, N-channel Trench MOSFET

PMZB550UNE

Marking：01010101；Package：DFN1006B-3；30 V, N-channel Trench MOSFET