BC857BMB

Marking：01000101；Package：SOT883B；45 V, 100 mA PNP general-purpose transistors

Featuresandbenefits LeadlessultrasmallSMDplastic package PowerdissipationcomparabletoSOT23 Lowpackageheightof0.37mm AEC-Q101qualified

BC857CMB

Marking：01000110；Package：SOT883B；45 V, 100 mA PNP general-purpose transistors

Featuresandbenefits LeadlessultrasmallSMDplastic package PowerdissipationcomparabletoSOT23 Lowpackageheightof0.37mm AEC-Q101qualified

BC857CQA

Marking：010001；Package：SOT1215；45 V, 100 mA PNP general-purpose transistors

Featuresandbenefits General-purposetransistors Threecurrentgainselections Lowpackageheightof0.37mm SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint AEC-Q101qualified

BSC010NE2LS

Marking：010NE2LS；Package：PG-TDSON-8；OptiMOSTM Power-MOSFET

Features •OptimizedforhighperformanceBuckconverter •Verylowon-resistanceRDS(on)@VGS=4.5V •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccording

BSC012N06NS

Marking：012N06N；Package：TSON-8-3；OptiMOSTM5 Power-Transistor, 60 V

Features •Optimizedforsynchronousrectification •100avalanchetested •Superiorthermalresistance •N-channel •175°Crated •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjointreliabilityduetoenlargedsourceinterconnection

BSC014N03LSG

Marking：014N03LS；Package：PG-TDSON-8；OptiMOS?? Power-MOSFET

Features •FastswitchingMOSFETforSMPS •OptimizedtechnologyforDC/DCconverters •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel •Logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Superiorthermalresistance •Avala

BSC014N04LS

Marking：014N04LS；Package：TDSON-8FL；OptiMOSTM Power-MOSFET, 40 V

Features •Optimizedforsynchronousrectification •Verylowon-stateresistanceRDS(on) •100avalanchetested •Superiorthermalresistance •N-channel,logiclevel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjoin

BSC016N03LSG

Marking：016N03LS；Package：TDSON-8；OptiMOS?? Power-MOSFET

Features •FastswitchingMOSFETforSMPS •OptimizedtechnologyforDC/DCconverters •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel •Logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Superiorthermalresistance •Avala

BSC016N06NSSC

Marking：016N06SC；Package：PG-WSON-8-2；OptiMOSTM Power-MOSFET, 60 V

Features •Doublesidecooledpackage-withlowestJuntion-topthermalresistance •175°Crated •Optimizedforsynchronousrectification •100avalanchetested •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •High

DCP3601CDMR

Marking：01CD；Package：SOT23-6L；36 V, 1 A synchronous step-down converter in SOT23-6L

Features •88%typicalefficiencyat600mAload(VIN=24V,VOUT=5V) •91%typicalefficiencyat600mAload(VIN=12V,VOUT=5V) •3.3Vto36Vinputoperatingvoltagerange •Upto1Aoutputcurrentcapability •110μAinputquiescentcurrent •1MHzfixedswitchingfreq