IPP018N03LF2S

Marking：018N03F2；Package：PG-TO220-3；MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V

Features •Optimizedforawiderangeofapplications •N‑channel,logiclevel •100%avalanchetested •175°Crated •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIEC61249‑2‑21

IPP018N10N5

Marking：018N10N5；Package：PG-TO220-3；MOSFET OptiMOSTM 5 Power-Transistor, 100 V

Features •Idealforhighfrequencyswitchingandsync.rec. •N-channel,normallevel •OptimizedforFOMOSS •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IPP019N06NF2S

Marking：019N06NS；Package：PG-TO220-3；StrongIRFETTM2 Power-Transistor

Features •Optimizedforwiderangeofapplications •N-channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IPP019N08NF2S

Marking：019N08NS；Package：PG-TO220-3；StrongIRFETTM2Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IPT012N08N5

Marking：012N08N5；Package：PG-HSOF-8-1；N-channel, normal level

Features •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21

IPT012N08NF2S

Marking：012N08NS；Package：PG-HSOF-8；StrongIRFETTM 2 Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IPT013N08NM5LF

Marking：013N08LF；Package：PG-HSOF-8；OptiMOSTM 5 Linear FET, 80 V

Features •Idealforhot-swapande-fuseapplications •Verylowon-resistanceRDS(on) •WidesafeoperatingareaSOA •N-channel,normallevel •100avalanchetested •Pb-freeplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IPT015N10NF2S

Marking：015N10NS；Package：PG-HSOF-8；StrongIRFETTM 2 Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IPT017N10NF2S

Marking：017N10NS；Package：PG-HSOF-8；StrongIRFETTM 2 Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IPT017N12NM6

Marking：017N12N6；Package：PG-HSOF-8；OptiMOSTM 6 Power-Transistor, 120 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •Optimizedforhighfrequencyswitching •Pb-freeleadplating;RoHSco