首页>FDG6301N_F085>规格书详情
FDG6301N_F085中文资料PDF规格书
FDG6301N_F085规格书详情
General Description
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
Features
■ 25 V, 0.22 A continuous, 0.65 A peak.
RDS(ON) = 4 Ω @ VGS= 4.5 V,
RDS(ON) = 5 Ω @ VGS= 2.7 V.
■ Very low level gate drive requirements allowing direct
operation in 3 V circuits (VGS(th) < 1.5 V).
■ Gate-Source Zener for ESD ruggedness
(>6kV Human Body Model).
■ Compact industry standard SC70-6 surface mount
package.
■ RoHS Compliant
■ Qualified to AEC Q101
产品属性
- 型号:
FDG6301N_F085
- 功能描述:
MOSFET Dual N-Chan Digital MOSFET; Automotive
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON/安森美 |
21+ |
SC-70-6 |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
ON |
24+ |
SC70-6 |
9000 |
只做原装正品 有挂有货 假一赔十 |
询价 | ||
ON/安森美 |
2023+ |
SC70-6 |
12000 |
专注全新正品,优势现货供应 |
询价 | ||
VB |
2019 |
SC70 |
55000 |
绝对原装正品假一罚十! |
询价 | ||
ON/安森美 |
23+ |
SC70-6 |
50000 |
只做原装正品 |
询价 | ||
ON/安森美 |
23+ |
NA/ |
6327 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
onsemi(安森美) |
23+ |
SC706 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
FAIRCHILD/仙童 |
1925+ |
SC-70-6 |
45000 |
真实库存!原装特价!实单必成交! |
询价 | ||
ON(安森美) |
23+ |
NA |
8000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
询价 | ||
ON/安森美 |
2122+ |
SC70-6 |
12000 |
只做原装现货可开票 |
询价 |