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首页>FDG6301N_F085>芯片详情
FDG6301N_F085_ONSEMI/安森美半导体_MOSFET Dual N-Chan Digital MOSFET; Automotive汇莱威一部
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产品属性
- 类型
描述
- 型号
:FDG6301N_F085
- Pb-free
:Pb
- AEC Qualified
:A
- Halide free
:H
- PPAP Capablee
:P
- Status
:Active
- Channel Polarity
:N-Channel
- Configuration
:Dual
- V(BR)DSS Min (V)
:25
- VGS Max (V)
:8
- VGS(th) Max (V)
:1.5
- ID Max (A)
:0.22
- PD Max (W)
:0.3
- RDS(on) Max @ VGS = 2.5 V(mΩ)
:Q1=Q2=5000
- RDS(on) Max @ VGS = 4.5 V(mΩ)
:Q1=Q2=4000
- RDS(on) Max @ VGS = 10 V(mΩ)
:-
- Qg Typ @ VGS = 4.5 V (nC)
:1.1
- Qg Typ @ VGS = 10 V (nC)
:0.29
- Ciss Typ (pF)
:9.5
- Package Type
:SC-88-6/SC-70-6/SOT-363-6
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