FDG328P中文资料仙童半导体数据手册PDF规格书

描述 Description

This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized

for power management applications for a wide range of gate drive voltages (2.5V – 12V).

特性 Features

•–1.5 A, –20 V. Rds(on)= 0.145 Ω@ Vgs= –4.5 V

Rds(on)= 0.210 Ω@ Vgs= –2.5 V

• Low gate charge

• High performance trench technology for extremely low Rds(on)

• Compact industry standard SC70-6 surface mount package