P-Channel 2.5V Specified PowerTrench MOSFET

Description This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5V – 12V). Features •–1.5 A, –20 V. Rds(on)= 0.1

文件：76.76 Kbytes 页数：5 Pages

Fairchild

仙童半导体

P-Channel 20V (D-S) MOSFET

Application » Interfacing Switching » Portable equipment and battery » Load Switch

文件：1.95123 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

P 沟道，2.5V，指定 PowerTrench® MOSFET，-20 V，-1.5 A，145 mΩ

此P沟道2.5V额定MOSFET是采用飞兆半导体先进的PowerTrench工艺生产的稳固栅极版本。 它已针对栅极驱动电压范围(2.5V – 12V)广泛的电源管理应用进行了优化。 •-1.5 A，-20 V\n•RDS(ON) = 0.145 Ω @ VGS = -4.5 V\n•RDS(ON) = 0.210 Ω @ VGS = -2.5 V\n•低栅极电荷 \n•高性能沟道技术可实现极低的RDS(ON)\n•紧凑的工业标准SC70-6表面贴装封装;

ONSEMI

安森美半导体

SINGLE DIGIT STICK DISPLAY

0.362 INCH (9.2MM) SINGLE DIGIT STICK DISPLAY

文件：187.13 Kbytes 页数：5 Pages

Fairchild

仙童半导体

PNP SILICON TRANSISTOR

Description The GBC328 is designed for drive and output-stages of audio amplifiers. Features • High DC Current Gain: 100~630 @VCE=-1V, IC=-100mA • Complementary to GBC338

文件：189.1 Kbytes 页数：3 Pages

GTM

勤益投资控股

The GBC328 is designed for drive and output-stages of audio amplifiers

文件：191.6 Kbytes 页数：3 Pages

ETL

亚历电子