丝印：FDD8880；Package：TO-252；30V N -Channel MOSFET

Features High performance trench technology for extremely low RDS(ON) Low gate charge High power and current handling capability VDS =30V RDS(ON) (at VGS =10V)

文件：436.36 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：FDD8880；Package：TO-252；30V N -Channel MOSFET

Features High performance trench technology for extremely low RDS(ON) Low gate charge High power and current handling capability VDS =30V RDS(ON) (at VGS =10V)

文件：436.36 Kbytes 页数：8 Pages

UMW

友台半导体

N-channel Enhancement Mode Power MOSFET

Features  VDS= 30V, ID= 80A RDS(ON)

文件：2.243 Mbytes 页数：5 Pages

Bychip

百域芯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=58A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

文件：353.29 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel PowerTrench MOSFET

文件：127.5 Kbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel PowerTrench짰 MOSFET 30V, 58A, 9m廓

文件：503.61 Kbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel 30-V (D-S) MOSFET

文件：1.01995 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel PowerTrench짰 MOSFET 30V, 58A, 9m廓

文件：503.61 Kbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司