丝印：FDD8874；Package：TO-252；30V N -Channel MOSFET

Features • High performance trench technology for extremely low rDS(ON) • Low gate charge • High power and current handling capability • RoHS Compliant

文件：545.83 Kbytes 页数：7 Pages

UMW

友台半导体

丝印：FDD8874；Package：TO-252；30V N -Channel MOSFET

Features • High performance trench technology for extremely low rDS(ON) • Low gate charge • High power and current handling capability • RoHS Compliant

文件：545.83 Kbytes 页数：7 Pages

UMW

友台半导体

丝印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

文件：309.99 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel Enhancement Mode Power MOSFET

Features  VDS= 30V, ID= 150A RDS(ON)

文件：1.07114 Mbytes 页数：5 Pages

Bychip

百域芯

N-Channel PowerTrench MOSFET 30V, 116A

文件：133.86 Kbytes 页数：11 Pages

Fairchild

仙童半导体

N-Channel PowerTrench MOSFET 30V, 116A, 5.1m ohm

文件：664.41 Kbytes 页数：11 Pages

Fairchild

仙童半导体

N-Channel PowerTrench MOSFET 30V, 116A, 5.1m ohm

文件：664.41 Kbytes 页数：11 Pages

Fairchild

仙童半导体