丝印：FDD8780；Package：TO-252；25 V N -Channel MOSFET

Features Low gate charge: Qg(10) = 21nC(Typ), VGS = 10V Low gate resistance VDS(V) = 25V ID =35A (VGS = 10V) RDS(ON)

文件：640.3 Kbytes 页数：6 Pages

UMW

友台半导体

丝印：FDD8780；Package：TO-252；25 V N -Channel MOSFET

Features Low gate charge: Qg(10) = 21nC(Typ), VGS = 10V Low gate resistance VDS(V) = 25V ID =35A (VGS = 10V) RDS(ON)

文件：640.3 Kbytes 页数：6 Pages

UMW

友台半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=35A@ TC=25℃ ·Drain Source Voltage : VDSS=25V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.5mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：353.01 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel PowerTrench짰 MOSFET 25V, 35A, 8.5mOhm

文件：318.81 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司