丝印：FDD6670；Package：TO-252；30V N-Channel MOSFET

Features · RDS(ON )= 8 mW（ VGS = 10 V） · RDS(ON) = 10 mW（ VGS = 4.5 V） · Low gate charge · Fast Switching · High performance trench technology for extremely low RDS(ON) · VDS (V) = -30V

文件：458.59 Kbytes 页数：6 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：FDD6670；Package：TO-252；30V N-Channel MOSFET

Features · RDS(ON )= 8 mW（ VGS = 10 V） · RDS(ON) = 10 mW（ VGS = 4.5 V） · Low gate charge · Fast Switching · High performance trench technology for extremely low RDS(ON) · VDS (V) = -30V

文件：458.59 Kbytes 页数：6 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

N-Channel, Logic Level, PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) , fast switching speed and extremely low RDS(

文件：195.65 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

30V N-Channel MOSFET

Features · RDS(ON )= 8 mW（ VGS = 10 V） · RDS(ON) = 10 mW（ VGS = 4.5 V） · Low gate charge · Fast Switching · High performance trench technology for extremely low RDS(ON) · VDS (V) = -30V

文件：458.59 Kbytes 页数：6 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

N-Channel, Logic Level, PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) , fast switching speed and extremely low RDS(

文件：195.65 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

文件：1.0348 Mbytes 页数：4 Pages

Bychip

百域芯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=66A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =8mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：351.75 Kbytes 页数：2 Pages

ISC

无锡固电

30V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features •

文件：149.12 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=84A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：351.36 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

文件：986.81 Kbytes 页数：4 Pages

Bychip

百域芯