丝印：FDD4243；Package：TO-252；P-Channel MOSFET

Features High performance trench technology for extremely low rDS(on) RoHS Compliant VDS (V) =-40V RDS(ON)

文件：672.05 Kbytes 页数：6 Pages

UMW

友台半导体

丝印：FDD4243；Package：TO-252；P-Channel MOSFET

Features High performance trench technology for extremely low rDS(on) RoHS Compliant VDS (V) =-40V RDS(ON)

文件：580.97 Kbytes 页数：6 Pages

EVVOSEMI

翊欧

丝印：FDD4243；Package：TO252；P-Channel PowerTrench짰 MOSFET -40V, -14A, 64m廓

文件：427.58 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：FDD4243；Package：TO-252；P-Channel MOSFET

Features High performance trench technology for extremely low rDS(on) RoHS Compliant VDS (V) =-40V RDS(ON)

文件：672.05 Kbytes 页数：6 Pages

UMW

友台半导体

丝印：FDD4243；Package：TO-252；P-Channel MOSFET

Features High performance trench technology for extremely low rDS(on) RoHS Compliant VDS (V) =-40V RDS(ON)

文件：580.97 Kbytes 页数：6 Pages

EVVOSEMI

翊欧

丝印：FDD4243；Package：TO252；P-Channel PowerTrench짰 MOSFET -40V, -14A, 64m廓

文件：427.58 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：40P30；Package：TO-252-3L；P-Channel Enhancement Mode MOSFET

Features Vos = -40V ID=-30 A RDS(ON)

文件：1.61253 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

P-channel Enhancement Mode Power MOSFET

Features  VDS= -40V, ID= -40A RDS(ON)

文件：822.46 Kbytes 页数：5 Pages

Bychip

百域芯

40V P-Channel PowerTrench MOSFET -40V, -14A, 44mohm

Features ■ Typ rDS(on) = 36mΩ at VGS = -10V, ID = -6.7A ■ Typ rDS(on) = 48mΩ at VGS = -4.5V, ID = -5.5A ■ Typ Qg(TOT) = 21nC at VGS = -10V ■ High performance trench technology for extremely low rDS(on) ■ RoHS Compliant ■ Qualified to AEC Q101 Applications ■ Inverter ■

文件：419.58 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

40V P-Channel PowerTrench짰 MOSFET

文件：388.49 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司