型号：FDD4141；Package：TO-252-3L；P-Channel Enhancement Mode MOSFET

Features Vos=-40V ID=-50 A RDS(ON)

文件：2.81992 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

型号：FDD4141；Package：TO-252；P-Channel MOSFET

Features High performance trench technology for extremely low rDS(on) RoHS Compliant VDS (V) =-40V RDS(ON)

文件：586.19 Kbytes 页数：6 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

型号：FDD4141；Package：TO-252；P-Channel MOSFET

Features High performance trench technology for extremely low rDS(on) RoHS Compliant VDS (V) =-40V RDS(ON)

文件：498.11 Kbytes 页数：6 Pages

EVVOSEMI

翊欧

型号：FDD4141-F085；Package：D-PAK；P-Channel PowerTrench짰 MOSFET -40V, -50A, 12.3m廓

文件：328.52 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

型号：FDD4141；Package：TO-252；P-Channel MOSFET

Features High performance trench technology for extremely low rDS(on) RoHS Compliant VDS (V) =-40V RDS(ON)

文件：498.11 Kbytes 页数：6 Pages

EVVOSEMI

翊欧

型号：FDD4141；Package：TO-252-3L；P-Channel Enhancement Mode MOSFET

Features Vos=-40V ID=-50 A RDS(ON)

文件：2.81992 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

型号：FDD4141；Package：TO-252；P-Channel MOSFET

Features High performance trench technology for extremely low rDS(on) RoHS Compliant VDS (V) =-40V RDS(ON)

文件：586.19 Kbytes 页数：6 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

型号：FDD4141-F085；Package：D-PAK；P-Channel PowerTrench짰 MOSFET -40V, -50A, 12.3m廓

文件：328.52 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

型号：FDD4141；P-channel Enhancement Mode Power MOSFET

Features  VDS= -40V, ID= -40A RDS(ON)

文件：822.45 Kbytes 页数：5 Pages

Bychip

百域芯

型号：FDD4141；P-Channel PowerTrench짰 MOSFET

General Description This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on)and optimized Bvdss capability to offer superior performance benefit in the applications. and optimized switching performance capability reducing

文件：237.09 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司