丝印：FDD6685；Package：TO-252；- 30V P-Channel

General Description This P-Channel MOSFET has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capa

文件：389.79 Kbytes 页数：5 Pages

EVVOSEMI

翊欧

丝印：FDD6685；Package：TO-252；- 30V P-Channel

General Description This P-Channel MOSFET has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capa

文件：389.79 Kbytes 页数：5 Pages

EVVOSEMI

翊欧

30V P-Channel PowerTrench MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V –25V). Features · –40A, –30 V. RDS(ON)= 20

文件：116.54 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

P-channel Enhancement Mode Power MOSFET

Features  VDS= -30V, ID= -30A RDS(ON)

文件：905.37 Kbytes 页数：4 Pages

Bychip

百域芯

P-Channel 30-V (D-S) MOSFET

文件：1.02648 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

30V P-Channel PowerTrench횘 MOSFET

文件：187.48 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司