丝印：FDD8453LZ；Package：D-PAK；N-Channel Power Trench짰 MOSFET 40V, 50A, 6.5m廓

General Description This N-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener haS been added to enhance ESD voltage level. Features - Typ rDS(on) = 5mΩ at VGS

文件：510.1 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：FDD8453LZ；Package：D-PAK；N-Channel Power Trench짰 MOSFET 40V, 50A, 6.5m廓

General Description This N-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener haS been added to enhance ESD voltage level. Features - Typ rDS(on) = 5mΩ at VGS

文件：510.1 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=50A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =6.7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：331.66 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel Enhancement Mode Power MOSFET

Features  VDS= 40V, ID= 80A RDS(ON)

文件：2.17888 Mbytes 页数：4 Pages

Bychip

百域芯

N-Channel PowerTrench짰 MOSFET 40V, 50A, 6.7m廓

文件：276.87 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel Power Trench짰 MOSFET

文件：417.97 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel Power Trench짰 MOSFET 40V, 50A, 6.5m廓

文件：417.97 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司