丝印：FDB8443；Package：TO-263AB；N-Channel PowerTrench짰 MOSFET 40V, 80A, 3.0m廓

文件：549.35 Kbytes 页数：8 Pages

ONSEMI

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丝印：FDB8443；Package：TO-263AB；N-Channel PowerTrench짰 MOSFET 40V, 80A, 3.0m廓

文件：549.35 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=80A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：328.42 Kbytes 页数：2 Pages

ISC

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N-Channel PowerTrench짰 MOSFET

文件：292.39 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

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N-Channel PowerTrench짰 MOSFET 40V, 80A, 3.0m廓

文件：621.38 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel PowerTrench짰 MOSFET

文件：621.38 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司