丝印：FDB9409；Package：TO-263；N-Channel PowerTrench짰 MOSFET40 V, 80 A, 3.5 m廓

文件：623.61 Kbytes 页数：7 Pages

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安森美半导体

丝印：FDB9409；Package：TO-263；N-Channel PowerTrench짰 MOSFET40 V, 80 A, 3.5 m廓

文件：623.61 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=110A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：331.37 Kbytes 页数：2 Pages

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无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=90A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =2.9mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：331.77 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Logic Level PowerTrench MOSFET

文件：507.94 Kbytes 页数：8 Pages

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安森美半导体

N-Channel Logic Level PowerTrench MOSFET

文件：507.94 Kbytes 页数：8 Pages

ONSEMI

安森美半导体