丝印：FDD120AN15A0；Package：D-PAK；N-Channel Power Trench짰 MOSFET 150V, 14A, 120m廓

Features - Typ rDS(on) = 90.5mΩ at VGS = 10V, ID = 4A - Typ Qg(tot) = 11.3nC at VGS = 10V, ID = 4A - UIS Capability - RoHS Compliant - Qualified to AEC Q101 Applications - Automotive Engine Control - Powertrain Management - Solenoid and Motor Drivers - Integrated Starter/alternator -

文件：447.9 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：FDD120AN15A0；Package：D-PAK；N-Channel Power Trench짰 MOSFET 150V, 14A, 120m廓

Features - Typ rDS(on) = 90.5mΩ at VGS = 10V, ID = 4A - Typ Qg(tot) = 11.3nC at VGS = 10V, ID = 4A - UIS Capability - RoHS Compliant - Qualified to AEC Q101 Applications - Automotive Engine Control - Powertrain Management - Solenoid and Motor Drivers - Integrated Starter/alternator -

文件：447.9 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

N-channel Enhancement Mode Power MOSFET

Features VDS= 150V, ID= 20 A RDS(ON)

文件：685.91 Kbytes 页数：4 Pages

Bychip

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文件：251.05 Kbytes 页数：11 Pages

FairchildFairchild Semiconductor

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N-Channel 150 V (D-S) MOSFET

文件：1.00472 Mbytes 页数：9 Pages

VBSEMI

微碧半导体