丝印：FDB86363；Package：D2-PAK；N-Channel PowerTrench® MOSFET 80 V, 110 A, 2.4 mΩ

Features Typical RDS(on) = 2.0 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = 131 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator

文件：756.26 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：FDB86363；Package：D2-PAK；N-Channel PowerTrench® MOSFET 80 V, 110 A, 2.4 mΩ

Features Typical RDS(on) = 2.0 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = 131 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator

文件：756.26 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

N-Channel PowerTrench짰 MOSFET

Features ■ Typical RDS(on) = 2.0 mΩ at VGS = 10V, ID = 80 A ■ Typical Qg(tot) = 131 nC at VGS = 10V, ID = 80 A ■ UIS Capability ■ RoHS Compliant ■ Qualified to AEC Q101 Applications ■ Automotive Engine Control ■ PowerTrain Management ■ Solenoid and Motor Drivers ■ Integrated Starter/Alte

文件：492.19 Kbytes 页数：1 Pages

FAIRCHILD

仙童半导体