丝印：FDB3632；Package：TO-263AB；N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ

Features • rDS(ON) = 7.5mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 84nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 • RoHS Compliant Applications • DC/DC converters and Off-Line UPS • Distribute

文件：1.37282 Mbytes 页数：12 Pages

ONSEMI

安森美半导体

丝印：FDB3632；Package：TO-263AB；N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ

Features • rDS(ON) = 7.5mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 84nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 • RoHS Compliant Applications • DC/DC converters and Off-Line UPS • Distribute

文件：1.37282 Mbytes 页数：12 Pages

ONSEMI

安森美半导体

N-Channel PowerTrench MOSFET 100V, 80A, 9m?

Features • rDS(ON) = 7.5mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 84nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/DC converters and Off-Line UPS • Distribute

文件：267.76 Kbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel PowerTrench MOSFET

Features • rDS(ON) = 7.5mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 84nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/DC converters and Off-Line UPS • Distribute

文件：310.36 Kbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel PowerTrench MOSFET

Features ● rDS(ON) = 7.5mΩ (Typ.), VGS = 10V, ID = 80A ● Qg(tot) = 84nC (Typ.), VGS = 10V ● Low Miller Charge ● Low QRR Body Diode ● UIS Capability (Single Pulse and Repetitive Pulse)

文件：53.34 Kbytes 页数：2 Pages

KEXIN

科信电子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=80A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

文件：356.17 Kbytes 页数：3 Pages

ISC

无锡固电

N-Channel PowerTrench짰 MOSFET 100V, 80A, 9m廓

文件：489.88 Kbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel PowerTrench짰 MOSFET 100V, 80A, 9m廓

文件：489.88 Kbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司