丝印：FDB8441；Package：TO-263AB；N-Channel PowerTrench® MOSFET 40V, 120A, 2.5mΩ

Features Typ rDS(on) = 1.9mΩ at VGS = 10V, ID = 80A Typ Qg(10) = 215nC at VGS = 10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) RoHS Compliant Applications Powertrain Management Solenoid and Motor Drivers Electronic Steering Integr

文件：380.26 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

丝印：FDB8441；Package：TO-263AB；N-Channel PowerTrench® MOSFET 40V, 120A, 2.5mΩ

Features Typ rDS(on) = 1.9mΩ at VGS = 10V, ID = 80A Typ Qg(10) = 215nC at VGS = 10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) RoHS Compliant Applications Powertrain Management Solenoid and Motor Drivers Electronic Steering Integr

文件：380.26 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=120A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =2.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：328.29 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel PowerTrench MOSFET

文件：307.49 Kbytes 页数：7 Pages

Fairchild

仙童半导体

N-Channel PowerTrench짰 MOSFET 40V, 80A, 2.5m廓

文件：462.5 Kbytes 页数：7 Pages

Fairchild

仙童半导体

N-Channel PowerTrench짰 MOSFET

文件：462.5 Kbytes 页数：7 Pages

Fairchild

仙童半导体