丝印：FDB33N25；Package：D2-PAK；N-Channel UniFET™ MOSFET 250 V, 33 A, 94 mΩ

Features • RDS(on) = 94 mΩ (Max.) @ VGS = 10 V, ID = 16.5 A • Low Gate Charge (Typ. 36.8 nC) • Low Crss (Typ. 39 pF) • 100% Avalanche Tested Applications • PDP TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply Description UniFETTM MOSFET is Fairchild Semiconducto

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ONSEMI

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丝印：FDB33N25；Package：D2-PAK；N-Channel UniFET™ MOSFET 250 V, 33 A, 94 mΩ

Features • RDS(on) = 94 mΩ (Max.) @ VGS = 10 V, ID = 16.5 A • Low Gate Charge (Typ. 36.8 nC) • Low Crss (Typ. 39 pF) • 100% Avalanche Tested Applications • PDP TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply Description UniFETTM MOSFET is Fairchild Semiconducto

文件：524.55 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

N-Channel UniFET™ MOSFET 250 V, 33 A, 94 mΩ

Features • RDS(on) = 94 mΩ (Max.) @ VGS = 10 V, ID = 16.5 A • Low Gate Charge (Typ. 36.8 nC) • Low Crss (Typ. 39 pF) • 100% Avalanche Tested Applications • PDP TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply Description UniFETTM MOSFET is Fairchild Semiconducto

文件：524.55 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

250V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

文件：688.68 Kbytes 页数：2 Pages

Fairchild

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 33A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 94mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

无锡固电

250V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

文件：688.68 Kbytes 页数：2 Pages

Fairchild

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DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

Fairchild

仙童半导体

250V N-Channel MOSFET

文件：909.52 Kbytes 页数：9 Pages

Fairchild

仙童半导体

250V N-Channel MOSFET

文件：909.52 Kbytes 页数：9 Pages

Fairchild

仙童半导体

250V N-Channel MOSFET

文件：909.52 Kbytes 页数：9 Pages

Fairchild

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