30V P-Channel MOSFET

General Description The AO4413 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS -30V ID (at VGS

文件：567.54 Kbytes 页数：6 Pages

AOSMD

万国半导体

P-Channel Enhancement Mode Field Effect Transistor

[Alpha & Omega Semiconductor, Ltd.] General Description The AO4413 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -30V ID

文件：314.33 Kbytes 页数：6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-15 A (VGS =-20V) ● RDS(ON)

文件：2.23192 Mbytes 页数：5 Pages

KEXIN

科信电子

P-Channel 30-V (D-S) MOSFET

文件：991.03 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

P沟道MOSFET (8V - 60V)

Alpha and Omega Semiconductor采用先进的300mm和200mm工艺技术用于生产P 沟道功率 MOSFET，其具有卓越的鲁棒性，是负载切换、电池保护和电机驱动的理想选择。

AOS

美国万代

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Load Switch • Notebook Adaptor Switch

文件：991.95 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4413A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Standard product AO4413A is Pb-free (meets ROHS & Sony 259 specification

文件：116.98 Kbytes 页数：4 Pages

AOSMD

万国半导体

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4413A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Standard product AO4413A is Pb-free (meets ROHS & Sony 259 specification

文件：116.98 Kbytes 页数：4 Pages

AOSMD

万国半导体

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-15 A (VGS =-20V) ● RDS(ON)

文件：2.67415 Mbytes 页数：5 Pages

KEXIN

科信电子

P-Channel Enhancement Mode Field Effect Transistor

General Description\nThe AO4413A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Standard product AO4413A is Pb-free (meets ROHS & Sony 259 specifications). AO    VDS (V) = -30V\n   ID = -15A (VGS = -10V)\n   RDS(ON) < 7mΩ (VGS = -20V)\n   RDS(ON) < 8.5mΩ (VGS = -10V);

AOS

美国万代